JPH04380B2 - - Google Patents

Info

Publication number
JPH04380B2
JPH04380B2 JP57005703A JP570382A JPH04380B2 JP H04380 B2 JPH04380 B2 JP H04380B2 JP 57005703 A JP57005703 A JP 57005703A JP 570382 A JP570382 A JP 570382A JP H04380 B2 JPH04380 B2 JP H04380B2
Authority
JP
Japan
Prior art keywords
electron beam
single crystal
center
present
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57005703A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58123717A (ja
Inventor
Hiroshi Yasuda
Haruo Tsuchikawa
Kenichi Kawashima
Seiichiro Kawamura
Motoo Nakano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP570382A priority Critical patent/JPS58123717A/ja
Publication of JPS58123717A publication Critical patent/JPS58123717A/ja
Publication of JPH04380B2 publication Critical patent/JPH04380B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP570382A 1982-01-18 1982-01-18 半導体装置の製造方法 Granted JPS58123717A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP570382A JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP570382A JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58123717A JPS58123717A (ja) 1983-07-23
JPH04380B2 true JPH04380B2 (en]) 1992-01-07

Family

ID=11618467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP570382A Granted JPS58123717A (ja) 1982-01-18 1982-01-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58123717A (en])

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60152019A (ja) * 1984-01-20 1985-08-10 Agency Of Ind Science & Technol 電子ビームアニール方法
JPS62245619A (ja) * 1986-04-17 1987-10-26 Nec Corp 電子ビ−ムアニ−ル装置
JPH0793264B2 (ja) * 1987-08-21 1995-10-09 工業技術院長 半導体単結晶層の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device

Also Published As

Publication number Publication date
JPS58123717A (ja) 1983-07-23

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